The Fundamentals Of Tri-layered HOI MOSFET In Nano Regime
Author:   Lalthanpuii Khiangte ,  Rudra Sankar Dhar
Publisher:   LAP Lambert Academic Publishing
ISBN:  

9786209039553


Pages:   120
Publication Date:   09 October 2025
Format:   Paperback
Availability:   Available To Order   Availability explained
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The Fundamentals Of Tri-layered HOI MOSFET In Nano Regime


Overview

This book focuses in the development of a novel structure that can be in corporate to form a device with two strained Si layers in the channel region forming tri-layered strained channel heterostructure on insulator (HOI) nano-MOS system, which can be implemented to form a NanoFET. The heterostructure channel based on NanoFET consisting of mobility enriched double strained Si layers sandwiching the strained SiGe in between significantly enhances electron mobility in comparison to the conventional device of s-Si on relaxed SiGe channel MOSFET, leading to improved device performance without implementing any additional scaling.

Full Product Details

Author:   Lalthanpuii Khiangte ,  Rudra Sankar Dhar
Publisher:   LAP Lambert Academic Publishing
Imprint:   LAP Lambert Academic Publishing
Dimensions:   Width: 15.20cm , Height: 0.70cm , Length: 22.90cm
Weight:   0.172kg
ISBN:  

9786209039553


ISBN 10:   6209039553
Pages:   120
Publication Date:   09 October 2025
Audience:   General/trade ,  General
Format:   Paperback
Publisher's Status:   Active
Availability:   Available To Order   Availability explained
We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately.

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