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OverviewAppropriate for practicing engineers and graduate students, this dense collection details the many advances in using silicon germanium (SiGe) and silicon strained-layer epitaxy to practice bandgap engineering of semiconductor devices. Full Product DetailsAuthor: John D Cressler (Georgia Institute of Technology, Atlanta Georgia Institute of Technology, Atlanta, USA)Publisher: CRC Press Imprint: CRC Press ISBN: 9781281076632ISBN 10: 1281076635 Pages: 1249 Publication Date: 01 January 2006 Audience: General/trade , General Format: Electronic book text Publisher's Status: Active Availability: Available To Order We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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