Overview

The European Materials Society decided to hold a Symposium entitled Materials and Processes for Submicron Technologies in June 16-19, 1998, within the yearly E-MRS Spring Meeting in Strasbourg, France. The purpose of this meeting was to discuss the results of the advances in microelectronic devices directly relating to the reduction in size of features of the devices down to submicron size. When electronic materials are patterned to these small sizes, their physico-chemical properties show many aspects (interdiffusion, electromigration, etc.), many of these not well known yet. The articles presented in this volume, 28 in number, are representative of the 40 papers accepted for this particular E-MRS Meeting (Symposium N).

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Author:   J.M. Martinez-Duart (Fisica Aplicada, Universidad Cantoblanco, Madrid, Spain) ,  R. Madar (LMPG-ENSPG, Saint Martin d'Hères, France) ,  R.A. Levy (New Jersey Institute of Technology, Newark, NJ, USA)
Publisher:   Elsevier Science & Technology
Imprint:   Elsevier Science Ltd
Volume:   v. 89
Weight:   0.570kg
ISBN:  

9780080436173

ISBN 10:   008043617
Pages:   180
Publication Date:   03 November 1999
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Manufactured on demand  
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Table of Contents

Selected papers: Interconnect technology trend for microelectronics (R.Liu et al.). Study of C contamination during copper integration for subquarter micron technology (P. Motte et al.). Cobalt silicide thermal stability: from blanket thin film to submicrometer lines (A. Alberti et al.). TEM studies of the microstructure evolution in plasma treated CVD TiN thin films used as diffusion barriers (S. Ikeda et al.). Sputtered tungsten films on polyimide, an application for X-ray masks (J. Ligot et al.). Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy (E. Dubois, J.-L. Bubbendorff). Oxidation of rf plasma: hydrogenated crystalline Si (S. Alexandrova et al.). Determination of the spectral behaviour of porous silicon based photodiodes (R.J. Martín-Palma et al.).

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