Overview
Explores HfO2-based ferroelectrics for memory, sensing, and advanced electronic applications Ferroelectric hafnium oxide (HfO2)-based materials have transformed the field of electronic materials and device design, offering pathways to overcome long-standing barriers in scalability, compatibility, and reliability. The emergence of robust ferroelectricity in doped HfO2 has revolutionized both research and industry perspectives, providing a viable solution where conventional ferroelectrics often fell short. With contributions from leading experts, HfO2-Based Ferroelectric Materials addresses the critical need for a consolidated reference on HfO2-based ferroelectrics, offering foundational knowledge as well as the latest insights into fabrication, material characterization, and device integration. The book opens with fundamentals of ferroelectricity and the mechanisms driving HfO2-based ferroelectric behavior, before progressing to detailed examinations of deposition techniques, superlattice structures, and reliability considerations. It further explores a broad spectrum of applications, including non-volatile memories, neuromorphic computing, compute-in-memory architectures, and negative capacitance transistors, alongside emerging roles in energy storage, microwave technologies, and piezoelectric systems. Special attention is given to persistent challenges—such as the wake-up effect, fatigue, and imprint issues—and the strategies developed to mitigate them. An authoritative and well-structured resource for advancing the frontiers of electronic materials and device technologies, HfO2-Based Ferroelectric Materials: Explains the origins of ferroelectricity in doped HfO2 and its unique material advantages Details deposition techniques and approaches to regulating ferroelectric behavior Examines device-level challenges, including wake-up effect, fatigue, and imprint reliability Highlights applications spanning non-volatile memories, neuromorphic computing, and energy-efficient devices Discusses advanced designs such as superlattice-like laminate structures and 3D ferroelectric memories Provides insight into the reliability of HfO2-based thin films, capacitors, and field-effect transistors HfO2-Based Ferroelectric Materials: Fabrication, Characterization, and Device Applications is an essential resource for materials scientists, electronics engineers, semiconductor and solid-state physicists, and professionals in the semiconductor and sensor industries. It is also a valuable reference for graduate-level courses in electronic materials, semiconductor devices, and advanced nanotechnology within physics, materials science, and electrical engineering degree programs.
Full Product Details
Author: Xubing Lu (South China Normal University, China)
Publisher: Wiley-VCH Verlag GmbH
Imprint: Blackwell Verlag GmbH
ISBN: 9783527353187
ISBN 10: 3527353186
Pages: 480
Publication Date: 24 June 2026
Audience:
Professional and scholarly
,
Professional & Vocational
Format: Hardback
Publisher's Status: Forthcoming
Availability: Awaiting stock
Author Information
Xubing Lu is Professor of Physics at South China Normal University, where his research focuses on dielectric and ferroelectric thin-film materials and their applications in non-volatile memory devices. He earned his PhD in Physics from Nanjing University, China in 2002 and subsequently held research positions as a postdoctoral researcher, JSPS research fellow, and Humboldt fellow across leading institutions in China and abroad. Professor Lu has published over 250 scientific papers and holds more than 20 Chinese patents.
