Wafer Level Reliability of Advanced CMOS Devices & Processes

Author:   Yi Zhao ,  Terence B Hook ,  Xinggong Wan
Publisher:   Nova Science Publishers Inc
ISBN:  

9781604567137


Pages:   195
Publication Date:   26 November 2008
Format:   Hardback
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

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Wafer Level Reliability of Advanced CMOS Devices & Processes


Overview

The definition from SEMATECH of wafer level reliability test is: a methodology to assess the reliability impact of tools and processes by testing mechanism-specific test structures under accelerated conditions during device processing. Because wafer level reliability test is the accelerated test, it owns some different characters with common long time test in terms of failure mechanisms, test procedures, life time prediction, test structures design and so on. In this book, all items of wafer level reliability of CMOS devices and processes will be discussed. The purpose of this book is to provide a good and urgently need reference on MOS device reliability. The authors discuss how to enhance the veracity of lifetime prediction and the effects to degrade the veracity deeply. Finally, a discussion of the problems with wafer level reliability in terms of the engineering applications and research is given.

Full Product Details

Author:   Yi Zhao ,  Terence B Hook ,  Xinggong Wan
Publisher:   Nova Science Publishers Inc
Imprint:   Nova Science Publishers Inc
Weight:   0.608kg
ISBN:  

9781604567137


ISBN 10:   1604567139
Pages:   195
Publication Date:   26 November 2008
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Table of Contents

Introduction; Gate dielectric; Hot carrier effect; Electromigration; Plasma process induced damage; Reliability of high-k gate dielectrics; Index.

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