Overview

Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world­ wide competition in fabricating metal-oxide-semiconductor field-effect of develop­ transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi­ cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum­ marize the most recent developments and to discuss the future of bip­ olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to­ is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten­ tial for future progress still existing in this field. This progress is char­ acterized by the drive towards higher speed and lower power con­ sumption required for complex single-chip systems, as well as by sev­ eral concrete technological implementations for fulfilling these dem­ is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.

Full Product Details

Author:   Ludwig Treitinger ,  Mitiko Miura-Mattausch
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   Softcover reprint of the original 1st ed. 1988
Volume:   27
Dimensions:   Width: 15.50cm , Height: 0.90cm , Length: 23.50cm
Weight:   0.289kg
ISBN:  

9783642743627

ISBN 10:   3642743625
Pages:   167
Publication Date:   21 December 2011
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
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Table of Contents

1. History, Present Trends, and Scaling of Silicon Bipolar Technology.- 1.1 Introduction.- 1.2 Polysilicon Emitter Contact.- 1.3 Self-alignment with Polysilicon Layers.- 1.4 Scaling Problems.- 1.5 Heterojunction Transistors.- 1.6 Topical Modelling Problems.- 1.7 Demonstration Circuits.- 1.8 Summary and Prospects.- References.- 2. Self-Aligning Technology for Sub-100nm Deep Base Junction Transistors.- 2.1 Background.- 2.2 Limitations of the Modern Self-Aligned Transistors.- 2.3 BSA Technology.- 2.4 Summary.- References.- 3. Vertical Scaling Considerations for Polysilicon-Emitter Bipolar Transistors.- 3.1 Polysilicon Emitters.- 3.2 Base Charge Control.- 3.3 Transit Time Considerations.- 3.4 Conclusion.- References.- 4. Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects.- 4.1 Background.- 4.2 Process Technologies and Device Structures (First Generation).- 4.3 Process Technologies and Device Structures (Second Generation).- 4.4 Benefits and Device Performance.- 4.5 Application to Practical Devices.- 4.6 Problems and Limiting Aspects.- 4.7 Conclusion.- References.- 5. A Salicide Base Contact Technology (SCOT) for Use in High Speed Bipolar VLSI.- 5.1 Background.- 5.2 Gate-Speed Simulation.- 5.3 Process and Transistor Design.- 5.4 Gate Speed and Prescaler IC.- 5.5 VSC Masterslice.- 5.6 Conclusion.- References.- 6. Advanced Self-Alignment Technologies and Resulting Structures of High-Speed Bipolar Transistors.- 6.1 Background.- 6.2 SICOS Device Structure.- 6.3 Fabrication Process.- 6.4 Electrical Characteristics.- 6.5 Advanced Process Technology and Electrical Results for High-Speed SICOS Transistors.- 6.6 Conclusions.- References.- 7. Trends in Heterojunction Silicon Bipolar Transistors.- 7.1 Background.- 7.2 Polysilicon Emitter Bipolar Transistors.- 7.3 Epitaxial Emitter Bipolar Transistors.- 7.4 Heterojunction Bipolar Transistors.- 7.5 Conclusions.- References.- 8. Molecular Beam Epitaxy of Silicon-Based Bipolar Structures.- 8.1 Strengths of Si-MBE.- 8.2 Silicon Monolithic Millimeter Wave Integrated Circuits.- 8.3 Si/SiGe-Heterojunction Bipolar Transistors.- 8.4 Conclusions.- References.

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