Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties
Author:   Hamid Bentarzi
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Edition:   2011 ed.
ISBN:  

9783642266881


Pages:   106
Publication Date:   25 February 2013
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties


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Overview

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

Full Product Details

Author:   Hamid Bentarzi
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   2011 ed.
Dimensions:   Width: 15.50cm , Height: 0.60cm , Length: 23.50cm
Weight:   0.197kg
ISBN:  

9783642266881


ISBN 10:   3642266886
Pages:   106
Publication Date:   25 February 2013
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

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