Overview

Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic.This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.

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9781527506350

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Dr. V. I. Talanin was born into a Russian noble family. He is a Full Professor and Vice-Chief of the Computer Science and Software Engineering Department of the Institute of Economics and Information Technologies, Zaporozhye, Ukraine. He has published extensively in material science and semiconductor physics, and in software engineering, as well as in Russian history and genealogy. His publications include 11 books and around 200 scientific papers. He is a Member of the Editorial Boards of Journal of Crystallization Process and Technology, Science and Technology, and Journal of Information Systems & Engineering and Management.Dr. I. E. Talanin was born into a Russian noble family. He is a Full Professor and Chief of the Computer Science and Software Engineering Department of the Institute of Economics and Information Technologies, Zaporozhye, Ukraine. He has published extensively in material science and semiconductor physics, and in software engineering. His publications include five books and around 300 scientific papers.

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