Overview

Full Product Details

Author:   Said Hamdioui
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 2004
Volume:   26
Dimensions:   Width: 15.50cm , Height: 1.30cm , Length: 23.50cm
Weight:   0.454kg
ISBN:  

9781441954305

ISBN 10:   1441954309
Pages:   221
Publication Date:   09 December 2010
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Out of stock  
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Table of Contents

I Introductory.- 1 Introduction.- 2 Semiconductor memory architecture.- 3 Space of memory faults.- 4 Preparation for circuit simulation.- II Testing single-port and two-port SRAMs.- 5 Experimental analysis of two-port SRAMs.- 6 Tests for single-port and two-port SRAMs.- 7 Testing restricted two-port SRAMs.- III Testing p-port SRAMs.- 8 Experimental analysis of p-port SRAMs.- 9 Tests for p-port SRAMs.- 10 Testing restricted p-port SRAMs.- 11 Trends in embedded memory testing.- A Simulation results for two-port SRAMs.- A.1 Simulation results for opens.- A.2 Simulation results for shorts.- A.3 Simulation results for bridges.- B Simulation results for three-port SRAMs.- B.1 Simulation results for opens and shorts.- B.2 Simulation results for bridges.

Reviews

From the reviews: Static random access memories (SRAMs) enjoy a strategic position in the microelectronic industry. ! This book concentrates on the study of fault modeling, testing and test strategies for SRAMs. ! The book provides a well-written coverage in the area of single-, two- and n-port SRAM testing, fault modeling, and simulation. It is well-organized and very timely. ! The book promises to make valuable contribution to the education of graduate students ! . I highly recommend this book ! . (Mile Stojcev, Microelectronics Reliability, Vol. 45, 2005)

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