Overview

This volume contains papers from the Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2.

Full Product Details

Author:   NanoScience & Technology Inst (Nano Science & Technology Institute, Cambridge, MA, USA)
Publisher:   Taylor & Francis Ltd
Imprint:   The Nano Science & Technology Institute (NSTI)
Dimensions:   Width: 21.00cm , Height: 2.90cm , Length: 28.00cm
Weight:   1.274kg
ISBN:  

9780972842280

ISBN 10:   0972842284
Pages:   519
Publication Date:   11 June 2007
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Chapter 1: ,Advanced Semiconductors,An Electrothermal Solution of the Heat Equation for MMICs Based on the 2D Fourier Series,A. Giorgio and A.G. Perri,Politecnico di Bari, IT,,Spectral Analysis of Channel Noise in Nanoscale MOSFETS,G. Casinovi,Georgia Institute of Technology, US,,Gate Length Scaling Effects in ESD Protection Ultrathin Body SOI Devices,JW Lee, Y. Li and S.M. Sze,Natl Nano Device Labs & Natl Chiao Tung Univ, TW,,A Unified Mobility Model for Excimer Laser Annealed Complementary Thin Film Transistors Simulation,HY Lin, Y. Li, JW Lee, CM Chiu and S.M. Sze,Natl Nano Device Labs & Natl Chiao Tung Univ, TW,,Chapter 2: ,Nano Scale Device Modeling,Impact of Quantum Mechanical Tunnelling on Offleakage Current in Doublegate MOSFET using a Quantum Driftdiffusion Model,MA Jaud, S. Barraud and G. Le Carval,CEALETI, FR,,Methodology for Prediction of Ultra Shallow Junction Resistivities Considering Uncertainties with a Genetic Algorithm Optimization,C. Renard, P. Scheiblin, F. de Crécy, A. Ferron, E. Guichard, P. Holliger and C. Laviron,CEALETI, FR,,Fullband Particlebased Simulation of GermaniumOnInsulator FETs,S. Beysserie, J. Branlard, S. Aboud, S.M. Goodnick, T. Thornton and M. Saraniti,Illinois Institute of Technology, US,,A TechnologyIndependent Model for Nanoscale Logic Devices,M.P. Frank,University of Florida, US,,Hierarchical Simulation Approaches for the Design of UltraFast Amplifier Circuits,J. Desai, S. Aboud, P. Chiney, P. Osuch, J. Branlard, S. Goodnick and M. Saraniti,IIT/Rush University, US,,Principles of Metallic Field Effect Transistor (METFET),S.V. Rotkin and K. Hess,University of Illinois at UrbanaChampaign, Beckman Institute for Advanced Science and Technology, US,,Ab Initio Simulation on Mechanical and Electronic Properties of Nanostructures under Deformation,Y. Umeno and T. Kitamura,Kyoto University, JP,

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