Overview

A series of Geant4 based Monte Carlo simulations are used to explore and understand various radiation induced effects in semiconductor devices and environments. Beam quality and stray radiation of protons through FR4 printed circuit boards is studied to better understand beam conditions in a proton irradiation test environment involving many stacked printed circuit boards. Attention is payed to Silicon on Sapphire semiconductors and their behavior in the presence of radiation. A study of deposited energy versus beam incidence angle is done to extend experimental measurements irradiation at multiple incidence angle, and to better understand possible causes for digital signal bit-flip. Finally, the effects of an electric field on the charge distribution in sapphire in the presence of a cobalt-60 source are simulated.

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9781243380159

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