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OverviewA volume taken from papers presented at the Workshop on Stress Induced Phenomena in Metallization. This conference has been extended to reflect interest in interconnect metallization. First, the topics in metallization were extended to include problems related to atomic transport for reflow and filling of vias and contact holes, silicadation, and barrier metals. These topics are of particular interest for the development of the quarter-micron metallization. Metallization for liquid crystal display of devices and surface acoustic devices is also included. Problems relating to mass transport in these devices have become important, and several papers discuss the similarities and differences of these phenomena and their mechanisms. Full Product DetailsAuthor: H. Okabayashi (Hiroshima University, Japan) , S. Shingubara (Hiroshima University, Japan) , P.S. Ho (University of Texas, USA)Publisher: American Institute of Physics Imprint: American Institute of Physics Volume: Vol 418 ISBN: 9781563966828ISBN 10: 1563966824 Pages: 480 Publication Date: 01 October 1998 Audience: College/higher education , Professional and scholarly , Undergraduate , Postgraduate, Research & Scholarly Format: Hardback Publisher's Status: Active Availability: Out of stock The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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