Overview

As MOS devices are scaled to meet increasingly demanding circuit specifications, process variations have a greater effect on the reliability of circuit performance. For this reason, statistical techniques are required to design integrated circuits with maximum yield. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits describes a statistical circuit simulation and optimization environment for VLSI circuit designers. The first step toward accomplishing statistical circuit design and optimization is the development of an accurate CAD tool capable of performing statistical simulation. This tool must be based on a statistical model which comprehends the effect of device and circuit characteristics, such as device size, bias, and circuit layout, which are under the control of the circuit designer on the variability of circuit performance. The distinctive feature of the CAD tool described in this book is its ability to accurately model and simulate the effect in both intra- and inter-die process variability on analog/digital circuits, accounting for the effects of the aforementioned device and circuit characteristics. Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits serves as an excellent reference for those working in the field, and may be used as the text for an advanced course on the subject.

Full Product Details

Author:   Christopher Michael ,  Mohammed Ismail
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1993
Volume:   211
Dimensions:   Width: 15.50cm , Height: 1.10cm , Length: 23.50cm
Weight:   0.332kg
ISBN:  

9781461363798

ISBN 10:   1461363799
Pages:   190
Publication Date:   27 September 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
We will order this item for you from a manufactured on demand supplier.

Table of Contents

1. Introduction.- 1.1 Research Focus.- 1.2 Significance of Research.- 2. Survey of Statistical Modeling and Simulation Techniques.- 2.1 Statistical Parameter Modeling...- 2.2 Statistical Simulation.- 3. Statistical MOS Model.- 3.1 Modeling Obstacles.- 3.2 Parameter Mismatch Variance Model.- 3.3 Distance Dependence of Parameter Variance.- 3.4 Parameter Correlations: Principal Component Analysis.- 3.5 Model Integration: Statistical Parameter Model.- 3.6 Model Calculation Example.- 4. Experimental Process Characterization for MOS Statistical Mode.- 4.1 The BSIM Model...- 4.2 BSIM Parameter Extraction.- 4.3 Test Chip Description.- 4.4 Process Characterization Data.….- 5. CAD Implementation of the SMOS Model • 8.- 5.1 APLAC - An Object-Oriented Circuit Simulator.- 5.2 Simulation Framework…..- 5.3 Model Calculation Programs.(MCPs)...- 5.4 Measurement and Simulation of Test Circuits..- 6. Statistical CAD of Analog MOS Circuits..- 6.1 Basic Analog Sub-Circuits.… §.- 6.2 Operational Amplifier...- 7. Applications of the SMOS Model to Digital Integrated Circuits.- 7.1 Introduction.- 7.2 CMOS Inverter.- 7.3 Dynamic Sense Amplifier…..- 8. Conclusion and Future Work.- 8.1 Potential Uses for the SMOS Model.- Appendix page.- A mcp - spice implementation of smos.- B aplac input files.- Bibliograph.- Y index.

Reviews

Author Information

Tab Content 6

Author Website:  

Customer Reviews

Recent Reviews

No review item found!

Add your own review!

Countries Available

All regions