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Overview* Describes and evaluates the fundamental principles, modelling, simulation, design and fabrication of a range of different types of small swing switch as enablers of energy-efficient ICs and systems * Provides an in-depth overview of the existing solutions for steep subthreshold switches * Covers impact ionization MOS, tunnel FETs, negative capacitance FETs and NEM relays * Critically discusses the merits of each technology based on numerical simulations and experiments * Includes chapters on nanoscale silicon CMOS and silicon nanowire technology Full Product DetailsAuthor: Adrian M. Ionescu (Ecole Polytechnique Federale de Lausanne) , Kathy Boucart (Ecole Polytechnique Federale de Lausanne) , Kirsten E. Moselund (IBM Research GmbH) , Vincent Pott (University of California, Berkeley)Publisher: Cambridge University Press Imprint: Cambridge University Press ISBN: 9780521763585ISBN 10: 0521763584 Pages: 270 Publication Date: 01 October 2017 Audience: Professional and scholarly , Professional & Vocational Format: Hardback Publisher's Status: Postponed Indefinitley Availability: Out of stock Table of ContentsForeword; 1. NanoCMOS; 2. Silicon nanowires; 3. Small swing switch - impact ionization MOS; 4. Small swing switch - tunnel FET; 5. Small swing switch - negative capacitance FET; Small swing switch - MEM and NEM devices; Overview and conclusion.ReviewsAuthor InformationAdrian M. Ionescu is an Associate Professor at the Ecole Polytechnique Federale de Lausanne (EPFL), where he is the Director of the Nanoelectronic Devices Laboratory. Kathy Boucart is currently studying for her Ph.D. at the Nanoelectronic Devices Laboratory of the Ecole Polytechnique Federale de Lausanne. Kirsten E. Moselund is a Research Staff Member in the Nanoscale Electronics Group at IBM Research, Zurich. Vincent Pott is a Postdoctoral Associate at the University of California, Berkeley. Tab Content 6Author Website:Countries AvailableAll regions |
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