Overview

Single-Atom Nanoelectronics covers the fabrication of single-atom devices and related technology, as well as the relevant electronic equipment and the intriguing new phenomena related to single-atom and single-electron effects in quantum devices. It also covers the alternative approaches related to both silicon- and carbon-based technologies, also from the point of view of large-scale industrial production. The publication provides a comprehensive picture of the state of the art at the cutting edge and constitutes a milestone in the emerging field of beyond-CMOS technology. Although there are numerous publications on nanoelectronics, no book highlights the effect of a single atom on device performance, which can be beneficial for making extensive use of CMOS technologies. This book is the first to deal with topics related to single-atom control, which is the final frontier for nanoelectronics.

Full Product Details

Author:   Enrico Prati (Laboratorio MDM - IMM - CNR, Milan, Italy) ,  Takahiro Shinada (Waseda University, Tokyo, Japan)
Publisher:   Pan Stanford Publishing Pte Ltd
Imprint:   Pan Stanford Publishing Pte Ltd
Dimensions:   Width: 15.20cm , Height: 2.50cm , Length: 22.90cm
Weight:   0.657kg
ISBN:  

9789814316316

ISBN 10:   9814316318
Pages:   364
Publication Date:   17 April 2013
Audience:   College/higher education ,  Professional and scholarly ,  Tertiary & Higher Education ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Manufactured on demand  
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Preface Introduction Asen Asenov Quantum Information in Silicon Devices Based on Individual Dopants Enrico Prati and Andrea Morello Physics of Impurities in Silicon Topology of Individual Donors Embedded in Silicon Devices Quantum Information with Donors in Silicon Electron Spin Qubits with Donors Coherent Passage of Information Decoherence Quantum Nondemolition Measurements of Single-Donor Nuclear and Electron Spins Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon Rajib Rahman, Lloyd C. L. Hollenberg, and Gerhard Klimeck Tight-Binding Method and NEMO-3D Electronic Structure of a Group V Donor in Bulk Silicon Donor Qubits in Silicon Orbital Stark Effect of Donors in Nanostructures Hyperfine Stark Effect Using Scanning Tunneling Microscopy to Realize Atomic-Scale Silicon Devices Martin Fuechsle and Michelle Y. Simmons Outline of the Fabrication Strategy All-Epitaxial Dopant-Based Quantum Dots Downscaling of Dopant-Based Devices Toward Deterministic Single-Atom Devices Toward a Planar Qubit Architecture Deterministic Single-Ion Implantation Method for Extending CMOS Technologies Takahiro Shinada The Importance of Deterministic Doping Single-Ion Implantation Method Ordered Dopant Arrays Asymmetric Ordered Dopant Effects on Transistor Performances Quantum Transport in Deterministically Implanted Single Donors Future Issues Single-Ion Implantation for Quantum Computing David N. Jamieson Quantum Computation Single-Ion Implantation Future Prospects Future Perspectives Single Atom Imaging—Dopant Atoms in Silicon-Based Semiconductor Devices—by Atom Probe Tomography Koji Inoue and Yasuyoshi Nagai Introduction to the Single Atom Imaging Atom Probe Tomography Dopant Distribution in a MOSFET Dopant Distribution in FinFETs Future Prospects for APT Low-Noise Current Measurements on Quantum Devices Operating at Cryogenic Temperature Filippo Guagliardo and Giorgio Ferrari Fundamentals of Current Measurements Design Rules for Low-Noise Transimpedance Amplifiers Wide-Band Transimpedance Amplifiers Cryogenic CMOS Amplifiers: Challenges and Opportunities General Considerations Orbital Structure and Transport Characteristics of Single Donors Jan Verduijn, Giuseppe C. Tettamanzi, and Sven Rogge Literature Review Structure of the Device Eigenstates of a Single Donor Future Perspectives Single-Donor Transport Spectroscopy in Ultimate Silicon Transistors Marc Sanquer and Xavier Jehl Variability in Ultimate Silicon Transistors CMOS Processes for Single-Atom Transistors Low-Temperature Spectroscopy and Correlation with 300 K Behavior Advantages of the Size Reduction in Single-Atom Transistors What can we Learn from Low-Temperature Transport Spectroscopy in a Single, Shallow Dopant? A Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in Silicon Thomas Schenkel, Cheuk Chi Lo, Christoph D. Weis, Jeffrey Bokor, Alexei M. Tyryshkin, and Stephen A. Lyon General Considerations Coupled Donor–Quantum Dot Spin Qubits Coherence of Donor Spins in 28Silicon Elements of Device Fabrication for Donor–Dot Spin Qubits Placement of Single Donors Single-Ion Implantation Single Spins in Diamond: Novel Quantum Devices and Atomic Sensors Fedor Jelezko Defects in Diamond Optical Properties of NV Defects Spin Properties and Spin Readout Diamond Quantum Registers Applications of Single-Color Centers for Novel Imaging Techniques Magnetometry with Single Diamond Spins Future Perspectives Silicon-Based Single-Dopant Devices and Integration with Photons Michiharu Tabe, Daniel Moraru, and Arief Udhiarto Introduction—Integration of Single-Dopant Electronics and Single-Photon Detection Single-Dopant Transistors in Dopant-Rich Environments—Dopant-Based Functionalities Effects of Photon Illumination on Doped-Nanowire SOI Transistors Future Directions Circuits with Single-Atom Devices Jan A. Mol and Sven Rogge Single-Atom Devices for Circuits  Hybrid Circuits Full Addition Using a Single-Atom Transistor Index

Reviews

This collection of papers on single-atom nanoelectronics represents a unique view on current research in this exciting new area. From nanotechnology issues via devices and single transistors to circuits, it covers the whole field of single-atom electronics. I recommend the book to researchers and students in nanoscience and nanoelectronics. -Dr. Jaap Hoekstra, Delft University of Technology

This collection of papers on single-atom nanoelectronics represents a unique view on current research in this exciting new area. From nanotechnology issues via devices and single transistors to circuits, it covers the whole field of single-atom electronics. I recommend the book to researchers and students in nanoscience and nanoelectronics. -Dr. Jaap Hoekstra, Delft University of Technology

Author Information

Enrico Prati received a bachelor’s in theoretical physics in 1998 from the University of Pisa and a PhD in physics in 2002. From 2003 to 2008, he worked at Istituto Nazionale di Fisica della Materia (INFM) and from 2009 he is permanent researcher of Istituto per la Microelettronica e Microsistemi (IMM) of Consiglio Nazionale delle Ricerche (CNR) in Agrate Brianza. In February 2004 he received the Young Scientist Award from the URSI for his work on negative refractive index propagation and metamaterials. From 2011, he has contributed to the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Materials (ERM) Committee on deterministic doping. His present research fields are both theoretical and experimental aspects of low-dimensional electron systems, quantum transport, deterministic doping for More than Moore applications, and quantum information in solid state. At present Dr. Prati is secretary of the Associazione Italiana per la Ricerca (www.associazionericerca.it) . Takahiro Shinada received a PhD in engineering in 2000 and an MBA in technology management in 2007 from Waseda University. From 2000 to 2012 he worked at Waseda University, where he was promoted to associate professor in 2006. Since 2012 he has been with the National Institute of Advanced Industrial Science and Technology (AIST), serving as the senior officer for advanced nanodevice research. He is a member of the International Technology Roadmap for Semiconductors (ITRS) Emerging Research Devices (ERD) and Emerging Research Materials (ERM) Chapters. His research concerns are deterministic doping in nanoelectronics for extended CMOS applications and its application in biological systems for environment, safety, and health (ESH) issues.

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