Overview

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a ""Who's Who"" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Full Product Details

9783527409532

Table of Contents

Reviews

"""At this stage, the two volumes provide an up-to-date, comprehensive, and critical assessment of all aspects of SiC semiconductor technology with an emphasis on power electronics . . . The contributions are written by internationally renowned experts from industry as well as academia who are actively involved in SiC R&D. Hence, the two volumes provide and evaluate source of information for everybody working with SiC or generally interested in the current and future state of power electronics"". (Int. Journal of Microstructure and Materials Properties, 2011)  "

At this stage, the two volumes provide an up-to-date, comprehensive, and critical assessment of all aspects of SiC semiconductor technology with an emphasis on power electronics . . . The contributions are written by internationally renowned experts from industry as well as academia who are actively involved in SiC R&D. Hence, the two volumes provide and evaluate source of information for everybody working with SiC or generally interested in the current and future state of power electronics. (Int. Journal of Microstructure and Materials Properties, 2011)<p>

Author Information

Peter Friedrichs is Managing Director at SiCED, a joint venture between Siemens and Infineon located in Erlangen, Germany. SiCED develops technologies for SiC power semiconductors and systems based on these devices. Their research is devoted to device design and simulation, processing technology as well as the characterization of devices including also end of life tests. Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, Japan, has dedicated his work to research on the growth and characterization of wide bandgap semiconductors, the process technology and physics of SiC devices. He has authored over 300 scientific publications. Lothar Ley is recently retired as Professor of Physics and Head of the Institute of Technical Physics at the University of Erlangen, Germany. From 2002 to 2008 he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) ""Silicon carbide as semiconductor material: novel aspects of crystal growth and doping"". Alongside its experimental research on SiC, his group currently also works on Diamond, Carbon Nanotubes, and Graphene. He has authored and co-authored over 400 scientific publications. Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nurnberg, Germany, and has authored over 300 scientific publications.

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