Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

Author:   John D. Cressler (Georgia Institute of Technology, Atlanta, USA) ,  John D. Cressler (Georgia Institute of Technology, Atlanta, USA) ,  Greg Freeman (IBM, Hopewell Junction, New York, USA) ,  Daniel Friedman (IBM, Yorktown Heights, New York, USA)
Publisher:   Taylor & Francis Inc
ISBN:  

9780849335594


Pages:   1248
Publication Date:   01 November 2005
Format:   Hardback
Availability:   In Print   Availability explained
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Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy


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Author:   John D. Cressler (Georgia Institute of Technology, Atlanta, USA) ,  John D. Cressler (Georgia Institute of Technology, Atlanta, USA) ,  Greg Freeman (IBM, Hopewell Junction, New York, USA) ,  Daniel Friedman (IBM, Yorktown Heights, New York, USA)
Publisher:   Taylor & Francis Inc
Imprint:   CRC Press Inc
Dimensions:   Width: 17.80cm , Height: 6.70cm , Length: 25.40cm
Weight:   2.313kg
ISBN:  

9780849335594


ISBN 10:   0849335590
Pages:   1248
Publication Date:   01 November 2005
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

Reviews

...a collection of 28 high-quality reviews rich in references, is a great success. The impact could go even further. I was very impressed on first reading, I was also very surprised by the contributors, since they are mostly eminent and very active in the field, though relatively young and representative of future trends. I was also excited by the up-to-date research content. Finally, this book will undoubtedly be an essential reference for researchers and an introduction for students just starting in the field. -Bao-Lian Su, Materials Today, Vol. 9, No. 1-2, Jan-Feb. 2006


Author Information

Cressler, John D.

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