Overview

This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals.

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9780123976314

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... a valuable and up-to-date reference for the whole field of circuit aspects of high speed semiconductor devices. --MICROELECTRONICS JOURNAL

Author Information

Eli Kapon received his Ph.D. in Physics from Tel Aviv University, Israel, in 1982. He was a Research Fellow at the California Institute of Technology, Pasadena, CA and Member of Technical Staff and District Manager at Bellcore, Red Bank, New Jersey, before assuming his current position of Professor of Physics of Nanostructures at the Swiss Federal Institute of Technology in Lausanne. His research interests have ranged from semiconductor lasers to integrated optoelectronics and, more recently, low-dimensional quantum nanostructures.

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