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Author:   REES
Publisher:   Birkhauser Boston Inc
Imprint:   Birkhauser Boston Inc
Edition:   Softcover reprint of the original 1st ed. 1980
Dimensions:   Width: 15.50cm , Height: 2.00cm , Length: 23.50cm
Weight:   0.575kg
ISBN:  

9781468491951

ISBN 10:   1468491954
Pages:   361
Publication Date:   12 December 2012
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Section 1: Invited papers.- Whither chromium in gallium arsenide?.- Key electrical parameters in semi-insulating materials; the methods to determine them in GaAs.- Modelling of a multi-valent impurity, such as GaAs:Cr.- Review of techniques for epitaxial growth of high-resistivity GaAs — Growth systems, problems and substrate effects.- Section 2: Preparation and growth of semi-insulating GaAs and InP.- The growth and properties of large semi-insulating crystals of indium phosphide.- Low pressure organometallic growth of chromium-doped GaAs buffer layers.- Large diameter, undoped semi-insulating GaAs for high mobility direct ion implanted FET technology.- Growth and characterization of semi-insulating GaAs for use in ion implantation.- The influence of substrate properties on the electrical characteristics of ion implanted GaAs.- Heat treatment behaviour of Cr implanted in GaAs SI material.- Redistribution and vaporization of Cr impurities in semi-insulating GaAs.- A model for thermal conversion of semi-insulating GaAs.- Hydrogen ion bombardment of GaAs for device isolation.- Influence of chromium redistribution on the electrical properties of Se and Zn implanted Cr-doped substrates.- Influence of annealing on the electrical properties of semi-insulating GaAs.- Redistribution of S and Cr in thermally annealed, sulphur implanted, semi-insulating GaAs.- Section 3: Investigations of semi-insulating materials.- Photoconductivity, photoluminescence and Zeeman spectroscopy of Cr in GaAs, GaP and InP.- Photoconductivity studies of Cr deep acceptors in InP.- Photoluminescence studies of deep impurity states in Fe-doped InP.- Photoluminescence and photoconductivity study of the 1.10 eV energy level in Fe-doped InP.- The cathodoluminescence of Cr-doped GaAs prepared by MOCVDepitaxy.- True mobilities in semi-insulating O- and Cr-doped GaAs.- Magneto-optical measurements on the 0.839 eV emission in GaAs:Cr.- Charge-carrier transport in semi-insulating InP surface layers.- Cr redistribution in epitaxial and implanted GaAs layers.- Investigations of Cr in GaAs using phonons.- Correlation between EPR assessed Cr2+ and electrical compensation in semi-insulating GaAs:Cr.- Activation of Cr1+ (3d5) level in GaAs:Cr induced by hydrostatic pressure.- Optical and thermal properties of Cr in GaAs.- Observation of very deep levels by optical DLTS.- Photoconductivity of epitaxial GaAs:Cr.- A possible interpretation of the 0.839 eV line in GaAs:Cr.- Section 4: Theoretical consideration of deep level semi-insulating systems.- Procedures for comparing the theoretical and experimental positions of energy levels of multi-electron impurities in semiconductors.- Jahn-Teller model of Cr2+:GaAs.- The application of evanescent states to deep impurities.- Complexes and their effects on III–V compounds.- Acceptor states and core shifts in AlxGa1-xAs.- Photo-ionization with phonon participation in semiconductors.- Influence of deep levels on Schottky barrier formation.- Impact ionization and Augereffects involving traps.- Section 5: Influence of deep levels on device properties and material characterization.- Electron mobility calculations for Fe-doped InP.- Material and structure factors affecting the large-signal operation of GaAs MESFETs.- Deep level measurements of layers on semi-insulating GaAs substrates by means of the photofet method.- Dark capacitance, photocapacitance, dark conductance and photoconductance transients on GaAs MESFETs.- Semi-insulating GaAs — a user’s view.- Interface effects on noise temperature of ungated GaAs-MESFETs.- Selenium ionimplanted GaAs MESFETs.- High resistivity layers in GaP, GaAs and GaAsP using electron bombardment.- Concluding remarks.- Author index.

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