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OverviewIn recent years, the field of self-assembled quantum dots has shown great promise for nanoscale applications in optoelectronics and quantum computing. Worldwide efforts in both theory and experimental investigations have driven the growth, characterization, and applications of quantum dots into an advanced multidisciplinary field. Written by leading experts in the field, Self-Assembled Quantum Dots provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Topics also includes current device applications such as quantum dot lasers and detectors as well as future applications to quantum information processing. Full Product DetailsAuthor: Zhiming M WangPublisher: Springer-Verlag New York Inc. Imprint: Springer-Verlag New York Inc. Edition: Softcover reprint of hardcover 1st ed. 2008 Volume: 1 Dimensions: Width: 15.50cm , Height: 2.40cm , Length: 23.50cm Weight: 0.724kg ISBN: 9781441925527ISBN 10: 144192552 Pages: 468 Publication Date: 23 November 2010 Audience: Professional and scholarly , Professional & Vocational Format: Paperback Publisher's Status: Active Availability: Out of print, replaced by POD ![]() We will order this item for you from a manufatured on demand supplier. Table of ContentsThe InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding.- Self-assembly of InAs Quantum Dot Structures on Cleaved Facets.- InAs/GaAs Quantum Dots with Multimodal Size Distribution.- Carrier Transfer in the Arrays of Coupled Quantum Dots.- Dynamics of Carrier Transfer into In(Ga)As Self-assembled Quantum Dots.- Spin Phenomena in Self-assembled Quantum Dots.- Excitons and Spins in Quantum Dots Coupled to a Continuum of States.- Quantum Coupling in Quantum Dot Molecules.- Studies of Semiconductor Quantum Dots for Quantum Information Processing.- Stress Relaxation Phenomena in Buried Quantum Dots.- Capacitance-Voltage Spectroscopy of InAs Quantum Dots.- In(Ga)As/GaAs Quantum Dots Grown by MOCVD for Opto-electronic Device Applications.- Area-selective and Site-controlled InAs Quantum-dot Growth Techniques for Photonic Crystal-based Ultra-small Integrated Circuit.- Detailed Analysis of the Shape-dependent Deformation Field in 3D Ge Islands.- Growth and Characterization of III-Nitride Quantum Dots and their Application to Emitters.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |