Simulation of Transport in Nanodevices

Author:   François Triozon (CEA-LETI, Grenoble, France) ,  Philippe Dollfus (Center for Nanoscience and Nanotechnology, Orsay, France)
Publisher:   ISTE Ltd and John Wiley & Sons Inc
ISBN:  

9781848215665


Pages:   228
Publication Date:   13 December 2016
Format:   Hardback
Availability:   Out of stock   Availability explained
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Simulation of Transport in Nanodevices


Overview

Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.

Full Product Details

Author:   François Triozon (CEA-LETI, Grenoble, France) ,  Philippe Dollfus (Center for Nanoscience and Nanotechnology, Orsay, France)
Publisher:   ISTE Ltd and John Wiley & Sons Inc
Imprint:   ISTE Ltd and John Wiley & Sons Inc
Dimensions:   Width: 16.50cm , Height: 2.80cm , Length: 24.10cm
Weight:   0.717kg
ISBN:  

9781848215665


ISBN 10:   1848215665
Pages:   228
Publication Date:   13 December 2016
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

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Author Information

François Triozon has been a permanent researcher since 2005 at CEA-LETI, in Grenoble, France. His research focuses on the simulation of electron transport in nanodevices, using semi-classical and quantum methods. Philippe Dollfus is currently Director of Research (CNRS) at the Center for Nanoscience and Nanotechnology, Orsay, France. His research activity covers different fields of computational nanoelectronics.

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