Overview
Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.
Full Product Details
Author: Jarek Dabrowski ,
Eicke R. Weber ,
Eicke R. Weber
Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition: Softcover reprint of hardcover 1st ed. 2004
Volume: 72
Dimensions:
Width: 15.50cm
, Height: 2.60cm
, Length: 23.50cm
Weight: 0.859kg
ISBN: 9783642058042
ISBN 10: 3642058043
Pages: 490
Publication Date: 04 December 2010
Audience:
Professional and scholarly
,
Professional and scholarly
,
Professional & Vocational
,
Postgraduate, Research & Scholarly
Format: Paperback
Publisher's Status: Active
Availability: Out of stock
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.
Reviews
From the reviews: This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. Eleven contributions make up the book; each is supported by a wealth of references. ! A valuable reference and guide to have on the shelf for frequent use and study. Certainly, the expertise and research experience of the contributors cannot be questioned. Summing up ... a richly rewarding work. (Current Engineering Practice, Vol. 47 (3), 2004-2005)
"From the reviews: ""This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. Eleven contributions make up the book; each is supported by a wealth of references. … A valuable reference and guide to have on the shelf for frequent use and study. Certainly, the expertise and research experience of the contributors cannot be questioned. Summing up ... a richly rewarding work."" (Current Engineering Practice, Vol. 47 (3), 2004-2005)"
From the reviews: This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. Eleven contributions make up the book; each is supported by a wealth of references. ... A valuable reference and guide to have on the shelf for frequent use and study. Certainly, the expertise and research experience of the contributors cannot be questioned. Summing up ... a richly rewarding work. (Current Engineering Practice, Vol. 47 (3), 2004-2005)
Author Information
J. Dabrowski: Born in Warsaw, Poland, Sept. 29, 1958. PhD, Institute of Physics of the Polish Academy of Science (IF PAN), Warsaw, 1989. Scientific staff member IF PAN 1983-1992; postdoctoral fellow Fritz Haber Inbstitute of the Max Planck Society, Berlin, Germany, 1990-1991; postdoctoral fellow Xerox Palo Alto Research Center, California, 1992; since 1993 with IHP-microelectronics, Frankfurt (Oder), Germany. Conference series chairman, Challenges in Predictive Process Simulation (1997, 2000, 2002); international advisory commmittee member, International Training Institute for Materials Science, Hanoi, Vietnam. Project leader, German Research Society (1998-2000); von Neuman Institute for Computing (since 1993). Author (monograph), ""Silicon surfaces and formation of interfaces; basic science in the industrial world"" (World Scientific, 2000). Editor (book) , """"Recent Developments in Vacuum Science and Technology"" (Research Signpost, 2003). Research in atomic diffusion mechanism in solid state; atomic structure of surfaces and semiconductor/dielectric interfaces; atomic structure of defects in semiconductors and insulators; signal processing for telecommunication. Achievements include discovery of atomic structure of the clean Si(113) surface; atomic structure of the main electron trap in GaAs (EL2 defect); atomic structure of the interface between a high-K dielectric (Pr2O3) and Si(001). Patents for silicon microelectronic technology; patents pending for telecommunication.
