Overview

This book investigates the processes and methods for preparing high-quality gallium nitride thin films on different substrates using plasma-enhanced atomic layer deposition technology. By introducing an aluminum nitride interlayer and nitrogen plasma pretreatment on silicon substrates, the oxygen impurity content in the films was significantly reduced, and the interface quality was improved. On sapphire substrates, high-quality single-crystal gallium nitride was epitaxially grown at low temperatures through a combination of baking and nitrogen plasma pretreatment. Polycrystalline gallium nitride films with sharp interfaces were directly deposited on quartz substrates, and their application in perovskite solar cells led to a substantial increase in conversion efficiency. This research provides important experimental foundation and methodological support for the controllable preparation of low-temperature, high-quality gallium nitride thin films and their applications in optoelectronic devices.

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