Physics of High-Speed Transistors

Author:   Juras Pozela
Publisher:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1993
ISBN:  

9781489912442


Pages:   337
Publication Date:   29 June 2013
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Our Price $448.77 Quantity:  
Add to Cart

Share |

Physics of High-Speed Transistors


Add your own review!

Overview

This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.

Full Product Details

Author:   Juras Pozela
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 1993
Dimensions:   Width: 15.50cm , Height: 1.80cm , Length: 23.50cm
Weight:   0.539kg
ISBN:  

9781489912442


ISBN 10:   1489912444
Pages:   337
Publication Date:   29 June 2013
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

1. High-Speed Transistor Parameters.- 2. Technological and Physical Limitations on Transistor Miniaturization.- 3. Maximum Drift Velocity in Semiconductors.- 4. Homojunction Field-Effect and Bipolar Transistors.- 5. Heterostructure Field-Effect Transistors.- 6. Heterostructure Bipolar Transistors.- 7. Hot-Electron Transistors.- 8. Analog Transistors.- 9. Quantum-Effect Transistors.- 10. High-Speed Devices and Integrated Circuits.- Index of Transistor Types and Their Abbreviations.

Reviews

Author Information

Tab Content 6

Author Website:  

Customer Reviews

Recent Reviews

No review item found!

Add your own review!

Countries Available

All regions
Latest Reading Guide

MRG2025CC

 

Shopping Cart
Your cart is empty
Shopping cart
Mailing List