Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change
Author:   Hai Li ,  Yiran Chen
Publisher:   Taylor & Francis Ltd
ISBN:  

9781138076631


Pages:   204
Publication Date:   29 March 2017
Format:   Paperback
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change


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Full Product Details

Author:   Hai Li ,  Yiran Chen
Publisher:   Taylor & Francis Ltd
Imprint:   CRC Press
Weight:   0.453kg
ISBN:  

9781138076631


ISBN 10:   1138076635
Pages:   204
Publication Date:   29 March 2017
Audience:   College/higher education ,  General/trade ,  Tertiary & Higher Education ,  General
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

Introduction to Semiconductor Memories. Phase Change Memory (PCM). Toggle-Mode MRAM (TM-MRAM). Spin-Torque Transfer RAM (STT -RAM). Resistive RAM (R-RAM). Memresistor. The Future of Nonvolatile Memory.

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Author Information

Hai Li

Tab Content 6

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Latest Reading Guide

NOV RG 20252

 

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