Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Author:   Yue Hao (Xidian University, Xi'an, PR of China) ,  Jin Feng Zhang (Xidian University, Xi'an, PR of China) ,  Jin Cheng Zhang (Xidian University, Xi'an, PR of China)
Publisher:   Taylor & Francis Inc
ISBN:  

9781498745123


Pages:   392
Publication Date:   03 October 2016
Format:   Hardback
Availability:   In Print   Availability explained
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Nitride Wide Bandgap Semiconductor Material and Electronic Devices


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Overview

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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Author:   Yue Hao (Xidian University, Xi'an, PR of China) ,  Jin Feng Zhang (Xidian University, Xi'an, PR of China) ,  Jin Cheng Zhang (Xidian University, Xi'an, PR of China)
Publisher:   Taylor & Francis Inc
Imprint:   CRC Press Inc
Weight:   0.884kg
ISBN:  

9781498745123


ISBN 10:   1498745121
Pages:   392
Publication Date:   03 October 2016
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

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Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.

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