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OverviewFull Product DetailsAuthor: Max G Lagally (Univ Of Wisconsin-madison, Usa) , Zhenyu Zhang (Oak Ridge Nat'l Lab, Usa)Publisher: World Scientific Publishing Co Pte Ltd Imprint: World Scientific Publishing Co Pte Ltd Volume: 14 ISBN: 9789810234713ISBN 10: 9810234716 Pages: 508 Publication Date: 02 February 1999 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Hardback Publisher's Status: Active Availability: Out of stock ![]() The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsTheoretical basis - study of strain and temperature dependence of metal epitaxy, C. Ratsch et al; atomistic simulation methods, A.F. Voter; submonolayer nucleation and growth of 2D islands and multilayer mound formation during homoepitaxy, J.W. Evans and M.C. Bartelt; equilibrium shape of a coherent epitaxial cluster, C. Duport et al; dynamic scaling in epitaxial growth, S. Das Sarma; scaling and crossovers in models for thin film growth, A Pimpinelli et al; quantum effect in meta overlayers on semiconductor substrates, J.-H. Cho et al; semiconductor-on-semiconductor growth - self-organized island arrays in SiGe/Si multilayers, C. Teichert et al; morphological evolution of strained semiconductor films, D.E. Jesson; large scale surface evolution during MBE growth - mounding, C. Orme et al; growth structures of silicon homoepitaxy by chemical vapour deposition, H. Rauscher and R.J. Behm; metal-on-metal growth - two-dimensional island shapes, T. Michely and G. Comsa; ramified growth in metal on metal epitaxy, R.Q. Hwang; morphology and energy barriers in homoepitaxial growth and coarsening - a case study for Cu(100), J.F. Wendelken et al; the concept of two mobilities for growth manipulation, G. Rosenfeld et al; tailoring epitaxial growth of low-dimensional magnetic heterostructures by means of surfactants, J.J. de Miguel et al; cluster diffusion, coalescence and coarsening in metal(100) homoepitaxial systems, P.A. Thiel and J.W. Evans; metal-on-semiconductor growth - Ag on Si-surfaces -from insulator to metal, M.H. von Hoegen et al; metal on semiconductor growth at low temperatures, M.C. Tringides; growing atomically flat metal films on semiconductor substrates, C.-K. Shih; removal - spontaneous halogen etching of Si, J.H. Weaver and C.M. Aldao; surface morphology of ion bombarded Si(001) and Ge(001) surfaces, H.J.W. Zandvliet and I.S.T. Tsong.ReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |