Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics

Author:   Hajime Asahi ,  Yoshiji Horikoshi
Publisher:   John Wiley & Sons Inc
ISBN:  

9781119355014


Pages:   512
Publication Date:   12 April 2019
Format:   Hardback
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Our Price $388.95 Quantity:  
Add to Cart

Share |

Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics


Add your own review!

Overview

Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies  Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Full Product Details

Author:   Hajime Asahi ,  Yoshiji Horikoshi
Publisher:   John Wiley & Sons Inc
Imprint:   John Wiley & Sons Inc
Dimensions:   Width: 17.80cm , Height: 3.10cm , Length: 24.10cm
Weight:   1.111kg
ISBN:  

9781119355014


ISBN 10:   111935501
Pages:   512
Publication Date:   12 April 2019
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of stock   Availability explained
The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available.

Table of Contents

Reviews

Author Information

Series Editors Arthur Willoughby University of Southampton, Southampton, UK Peter Capper formerly of SELEX Galileo Infrared Ltd, Southampton, UK Safa Kasap University of Saskatchewan, Saskatoon, Canada Edited by Hajime Asahi Emeritus Professor, Osaka University, Japan Yoshiji Horikoshi Emeritus Professor, Waseda University, Tokyo, Japan

Tab Content 6

Author Website:  

Customer Reviews

Recent Reviews

No review item found!

Add your own review!

Countries Available

All regions
Latest Reading Guide

wl

Shopping Cart
Your cart is empty
Shopping cart
Mailing List