Metallic Spintronic Devices

Author:   Xiaobin Wang (Avalanche Technology, Fremont, California, USA) ,  Krzysztof Iniewski
Publisher:   Taylor & Francis Ltd
ISBN:  

9781138072329


Pages:   274
Publication Date:   29 March 2017
Format:   Paperback
Availability:   In Print   Availability explained
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Metallic Spintronic Devices


Overview

Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devices Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis Investigates spintronic device write and read optimization in light of spintronic memristive effects Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.

Full Product Details

Author:   Xiaobin Wang (Avalanche Technology, Fremont, California, USA) ,  Krzysztof Iniewski
Publisher:   Taylor & Francis Ltd
Imprint:   CRC Press
Weight:   0.510kg
ISBN:  

9781138072329


ISBN 10:   113807232
Pages:   274
Publication Date:   29 March 2017
Audience:   College/higher education ,  General/trade ,  Tertiary & Higher Education ,  General
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

Perpendicular Spin Torque Oscillator and Microwave-Assisted Magnetic Recording. Spin-Transfer-Torque MRAM: Device Architecture and Modeling. The Prospect of STT-RAM Scaling. Spintronic Device Memristive Effects and Magnetization Switching Optimizing. Magnetic Insulator-Based Spintronics: Spin Pumping, Magnetic Proximity, Spin Hall, and Spin Seebeck Effects on Yttrium Iron Garnet Thin Films. Electric Field-Induced Switching for Magnetic Memory Devices.

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Author Information

Xiaobin Wang is director at Avalanche Technology and consultant at Caraburo Consulting LLC and Ingredients LLC. He holds a Ph.D from the University of California, San Diego. Dr. Wang has published over 100 articles and holds 50 US patents, approved or pending. He previously worked at Western Digital and Seagate Technology. His work in memory and data storage includes device design, advanced technology gap closure, prediction of system performance through bottom-up (from physics to system performance) and top-down (from system performance to component requirements) approaches, company product platform and basic technology roadmap modeling, new concept initiation, and intellectual property analysis.

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