Overview

This volume is the proceedings of a NATO Advanced study In- stitute held at the Hotel do Parque in Viana do Castelo (Portugal). The school was directed by Roger Kelly (U.S.A.) and M. Fernanda da Silva (Portugal), and the organizing committee consisted of Harry Bernas (France), George Carter (U.K.), Paolo Mazzoldi (Italy), and Edmund Taglauer (Germany). The dates were 24 August to 4 September, 1987. The School was conceived to satisfy the needs of those who study particle-surface interactions at high fluence, i.e. under conditions leading to chemical, electronic, mechanical, and structural changes rather than just doping. This community of scientists is surprisingly large even though demonstrated ap- plications are still relatively few. As such, the community is as much engaged in pure research as In applied work. It is very highly developed in Western Europe but less so in North America. This interesting state of balance has a number of causes, not the least of which is the way in which science is funded in North America: public relations plays a large role.

Full Product Details

Author:   Roger Kelly ,  M. Fernanda da Silva
Publisher:   Springer
Imprint:   Springer
Volume:   155
Dimensions:   Width: 17.00cm , Height: 3.10cm , Length: 24.40cm
Weight:   1.047kg
ISBN:  

9789401070638

ISBN 10:   9401070636
Pages:   606
Publication Date:   26 September 2011
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand  
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Table of Contents

Overview.- High-fluence ion irradiation: an overview.- Sputtering.- Historical overview on the fundamentals of sputtering.- Depth of origin of sputtered atoms.- Magnetron sputtering: physics and design.- On the formation and characterization of microcrystalline Si:H prepared by RF magnetron sputtering.- Depth profiling of Ta2O5 thin layer on Ta foil by ion scattering spectrometry and ion sputtering.- Bombardment of alkali and alkali-earth halides by ions and electrons.- Effects of Ar+ angle-of-incidence on the etching of Si with Cl2 and low-energy Ar+ ions.- Irradiation effects in ices by energetic ions.- Ion formation by very high energetic ion impact on solids.- Simulation.- Computer simulation of stopping and sputtering.- Computer simulation of ion-beam mixing of cobalt on silicon.- On the fractal nature of collision cascades.- Simple statistical models for erosion and growth.- Defects and Disorder.- Defects and defect processes.- Fast-ion-induced defects in silicon studied by deep level transient spectroscopy.- Low-energy (300 eV — 10 keV) Ar+ and Cl+ ion irradiation of (100) Si.- The charge state of iron implanted into sapphire.- Implantation and Mixing.- Direct and recoil implantation, and collisional ion-beam mixing: recent low-temperature experiments.- Mixing by defect-assisted migration of thin markers in solids.- The TRIUMF optically pumped polarized H- ion source.- Some high-current ion sources for materials modification.- Compositional and Chemical Changes.- Bombardment-induced compositional change with alloys, oxides, and oxysalts. I The role of the surface binding energy.- Investigation of preferential sputtering mechanisms by analysing the sample surface and near-surface region with AES and ISS.- High-fluence implantation in insulators. Part I:Compositional, mechanical, and optical changes.- High-fluence implantation in insulators. Part II: Chemical changes.- Electrochemical and corrosion behaviour of ion and laser-beam modified metal surfaces.- Structural Changes.- Ion-irradiation induced phase changes in metallic systems.- The topography of ion-bombarded surfaces.- Cultured blisters.- Electronic Changes.- Electronic properties of ion-implanted metals.- Mechanical Changes.- Tribology of implantation bilayers.- Adhesive and abrasive wear study of nitrogen implanted steels.- Effect of ?-recoil damage on the elastic moduli of zircon and tourmaline.- Depth-resolved investigation of structural transformations and hardness variations in implanted films on bulk samples.- Laser Processing.- Laser etching as an alternative.- Pulsed laser irradiation of heavily Ge implanted silicon.

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