Ion Implantation and Synthesis of Materials
Author:   Michael Nastasi ,  James W. Mayer
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Edition:   2006 ed.
Volume:   v.80
ISBN:  

9783540236740


Pages:   263
Publication Date:   09 August 2006
Format:   Hardback
Availability:   In Print   Availability explained
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Ion Implantation and Synthesis of Materials


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Overview

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Full Product Details

Author:   Michael Nastasi ,  James W. Mayer
Publisher:   Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Imprint:   Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Edition:   2006 ed.
Volume:   v.80
Dimensions:   Width: 15.50cm , Height: 1.70cm , Length: 23.50cm
Weight:   0.588kg
ISBN:  

9783540236740


ISBN 10:   3540236740
Pages:   263
Publication Date:   09 August 2006
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

General Features and Fundamental Concepts.- Particle Interactions.- Dynamics of Binary Elastic Collisions.- Cross-Section.- Ion Stopping.- Ion Range and Range Distribution.- Displacements and Radiation Damage.- Channeling.- Doping, Diffusion and Defects in Ion-Implanted Si.- Crystallization and Regrowth of Amorphous Si.- Si Slicing and Layer Transfer: Ion-Cut.- Surface Erosion During Implantation: Sputtering.- Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing.- Application of Ion Implantation Techniques in CMOS Fabrication.- Ion implantation in CMOS Technology: Machine Challenges.

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