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OverviewThis dissertation, Investigation of Inversion Layer Mobility in N-channel Mosfets With Thin Gate Oxide by 陳添華, Tim-wah, Chan, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3120651 Subjects: Thin films - SurfacesMetal oxide semiconductors Full Product DetailsAuthor: 陳添華 , Tim-Wah ChanPublisher: Open Dissertation Press Imprint: Open Dissertation Press Dimensions: Width: 21.60cm , Height: 1.40cm , Length: 27.90cm Weight: 0.807kg ISBN: 9781374743380ISBN 10: 1374743380 Publication Date: 27 January 2017 Audience: General/trade , General Format: Hardback Publisher's Status: Active Availability: Temporarily unavailable The supplier advises that this item is temporarily unavailable. It will be ordered for you and placed on backorder. Once it does come back in stock, we will ship it out to you. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
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