Introduction to Nanoelectronic Single-Electron Circuit Design

Author:   Jaap Hoekstra
Publisher:   Pan Stanford Publishing
ISBN:  

9781322634678


Pages:   308
Publication Date:   01 January 2009
Format:   Electronic book text
Availability:   Available To Order   Availability explained
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Introduction to Nanoelectronic Single-Electron Circuit Design


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Full Product Details

Author:   Jaap Hoekstra
Publisher:   Pan Stanford Publishing
Imprint:   Pan Stanford Publishing
ISBN:  

9781322634678


ISBN 10:   132263467
Pages:   308
Publication Date:   01 January 2009
Audience:   General/trade ,  General
Format:   Electronic book text
Publisher's Status:   Active
Availability:   Available To Order   Availability explained
We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately.

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Reviews

The spectacular evolution of microelectronics has demonstrated the power of the circuit paradigm . During the last decade, a broad class of nanoelectronic discrete devices has been proposed and successfully demonstrated; however, there still exists a gap between device physics and nanoelectronic integrated circuit design. This book offers an insight into an original and outstanding effort to bridge the gap between device physics and engineering of nanoelectronic integrated architectures. Original equivalent circuit models of metallic single-electron tunneling (SET) junctions and efficient analysis and synthesis techniques of nanoelectronic circuits are presented. This book in recommended to researchers and students interested in nanoscience and nanotechnology, especially in nanoelectronics. Arpad I. Csurgay, University, Hungary and University of Notre Dame, USA Single electron devices are promising candidates for next-generation circuits. By clarifying the relationship between models of different levels, this book offers useful knowledge on modeling which makes single electron devices treated the same as conventional transistors during circuit design. The new perspectives involved also help to conceive novel nano-devices. It is a very good reference for researchers who are engaged in this exciting area. Ning Deng, Tsinghua University, China


Author Information

Jaap Hoekstra was born in Amsterdam, the Netherlands, in 1955. He received an MSc in experimental physics from the University of Amsterdam and a PhD degree for research on (junction) charge-coupled devices, involving device physics, device development and subsystem concepts, from the Delft University of Technology, the Netherlands. From 1988 to 1995 he was at the Computer Architecture Laboratory at the TU-Delft working in the field of artificial neural networks. From 1996 to 1997 he worked on chaotic dynamics in power systems at the laboratory of Electrical Power Systems. In April 1997 he joined the Electronic Research Laboratory, where he is currently involved in research projects on artificial neural nets, biologic-inspired networks, neuromorphic circuits, nanoscale electronic devices, and single-electron tunneling devices.

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