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Full Product Details

Author:   Edward T. Yu ,  Omar Manasreh
Publisher:   Taylor & Francis Inc
Imprint:   CRC Press Inc
Dimensions:   Width: 15.20cm , Height: 4.60cm , Length: 22.90cm
Weight:   1.060kg
ISBN:  

9781560329749

ISBN 10:   1560329742
Pages:   714
Publication Date:   06 September 2002
Audience:   College/higher education ,  Postgraduate, Research & Scholarly
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

1. Ohmic Contacts to GaN 2. Characterization of Schottky Contacts on Nitride Semiconductors 3. Integration of GaN with Dissimilar Substrate Materials by Wafer Bonding and Laser Liftoff 4. Spontaneous and Piezoelectric Polarization in Nitride Heterostructures 5. AIGaN/GaN High Electron Mobility Transistors 6. Two-dimensional Electron Gas Transport Properties in Nitride Heterostructures Field Effect Transistors (HFETS) 7. Electron Transport in Wide-bandgap Semiconductors and Heterostructures 8. Gan Metal-semiconductor Field-effect Transistor 9. Piezoelectric Effect in Group III Nitride Based Heterostructures and Quantum Well Structure 10. AIGaInN MQW Laser Diodes 11. Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Laser 12. III-Nitride Based UV Photodetectors 13.III-Nitride-Based UV Photodetectors 14. AIGaN UV Photodetectors

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Yu, Edward T.

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