Overview

GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III–V processing, with emphasis on HBTs. It is aimed at practicing engineers and graduate students and engineers new to the field of III–V semiconductor IC processing. The book’s primary purpose is to discuss all aspects of processing of active and passive devices, from crystal growth to backside processing, including lithography, etching, and film deposition.

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9789814669306

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Reviews

""Drawing from decades of directly relevant experience in the field, the authors have created a modern, comprehensive review of all aspects of compound semiconductor IC fabrication, useful for both experts in the field and newcomers wanting to gain familiarity with the topic. This book contains extensive references, plus useful appendices of constants, acronyms, and material properties, making it a handy and often-pulled-off-the-shelf resource for CS professionals."" —Dr. Martin J. Brophy, Senior GaAs Test, Reliability, and Development Engineer, Avago Technologies ""This book will be greatly appreciated by researchers and students engaged in work with III–V semiconductors. With the primary focus on GaAs-based HBTs and related devices, the book also describes critical issues for emerging technologies such as GaN and RF MEMS. It brings together process information and insights from widely dispersed sources and provides a physics and chemistry background, along with up-to-date process design considerations, meeting several important needs of the III–V fabrication community."" —Prof. Peter Asbeck, Department of Electrical and Computer Engineering, University of California

Drawing from decades of directly relevant experience in the field, the authors have created a modern, comprehensive review of all aspects of compound semiconductor IC fabrication, useful for both experts in the field and newcomers wanting to gain familiarity with the topic. This book contains extensive references, plus useful appendices of constants, acronyms, and material properties, making it a handy and often-pulled-off-the-shelf resource for CS professionals. -Dr. Martin J. Brophy, Senior GaAs Test, Reliability, and Development Engineer, Avago Technologies This book will be greatly appreciated by researchers and students engaged in work with III-V semiconductors. With the primary focus on GaAs-based HBTs and related devices, the book also describes critical issues for emerging technologies such as GaN and RF MEMS. It brings together process information and insights from widely dispersed sources and provides a physics and chemistry background, along with up-to-date process design considerations, meeting several important needs of the III-V fabrication community. -Prof. Peter Asbeck, Department of Electrical and Computer Engineering, University of California

Author Information

Shiban Tiku is an electrical engineer from Kashmir University, India, an M. Tech. from IIT Kanpur, India, and a PhD in materials science from the University of Southern California, Los Angeles. Dr. Tiku started work in GaAs ICs at Texas Instruments, Dallas, and has been with the Rockwell Semiconductor Division, from which Skyworks, California, was spun off, for over 20 years, first in process development and then in process engineering and yield engineering, covering design, layout, wafer fabrication, and back-end processing. He has worked on epigrowth, ion implantation, thin-film deposition, FET- and HBT-type device processing, piezoelectric devices, etc., and is currently in charge of new process/product introduction at Skyworks. He has served on the CS MANTECH technical committee for over 10 years and is now on the executive committee as the university liaison. He has published numerous papers and is the (co)author of 15 patents. Dhrubes Biswas is an electrical engineer from IIT Kharagpur, India, and an MS and PhD in engineering (electronic devices and materials) from the University of Illinois, Urbana-Champaign. Prof. Biswas has made significant contributions to gas-source molecular beam epitaxy and played an instrumental role in establishing and advising strategic technology ventures in wireless communication and optical networking electronics worldwide. Currently at IIT Kharagpur, he is the professor of electronics and electrical communication engineering and a professor at Rajendra Mishra School of Engineering Entrepreneurship. He is deeply involved in the integration of III–V electronics/optical front-end devices epitaxially on silicon for high-performance systems. He has authored over 170 technical papers and books and holds numerous patents. He is a senior member of the Institute of Electrical Engineers (IEEE) and a member of Tau Beta Pi and Phi Kappa Phi.

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