Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride
Author:   Patrick Hofmann
Publisher:   Books on Demand
ISBN:  

9783752884920


Pages:   166
Publication Date:   15 August 2018
Format:   Paperback
Availability:   Available To Order   Availability explained
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Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride


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Author:   Patrick Hofmann
Publisher:   Books on Demand
Imprint:   Books on Demand
Dimensions:   Width: 14.80cm , Height: 0.90cm , Length: 21.00cm
Weight:   0.204kg
ISBN:  

9783752884920


ISBN 10:   3752884924
Pages:   166
Publication Date:   15 August 2018
Audience:   General/trade ,  General
Format:   Paperback
Publisher's Status:   Active
Availability:   Available To Order   Availability explained
We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately.

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Patrick Hofmann studied Applied Natural Science in Freiberg from 2008 to 2013 and finished his studies in the mid of 2013. Starting from June 2013 he worked as a scientist/ PhD-student at NaMLab gGmbH, where he cooperated with Freiberger Compound Materials GmbH, to investigate GaN single crystal growth via Hydride Vapour Phase Epitaxy with a deeper focus on doping. At the end of 2017 he handed in his dissertation and defended his results successfully. The publication of his work poses the end of his graduation.

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