Hot-Carrier Effects in MOS Devices
Author:   Eiji Takeda (Hitachi Ltd.) ,  Cary Y. Yang (Santa Clara University) ,  Akemi Miura-Hamada (Hitachi Ltd.)
Publisher:   Elsevier Science Publishing Co Inc
ISBN:  

9780126822403


Pages:   312
Publication Date:   28 November 1995
Format:   Hardback
Availability:   Out of print, replaced by POD   Availability explained
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Hot-Carrier Effects in MOS Devices


Overview

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.

Full Product Details

Author:   Eiji Takeda (Hitachi Ltd.) ,  Cary Y. Yang (Santa Clara University) ,  Akemi Miura-Hamada (Hitachi Ltd.)
Publisher:   Elsevier Science Publishing Co Inc
Imprint:   Academic Press Inc
Dimensions:   Width: 15.20cm , Height: 1.80cm , Length: 22.90cm
Weight:   0.580kg
ISBN:  

9780126822403


ISBN 10:   0126822409
Pages:   312
Publication Date:   28 November 1995
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Out of print, replaced by POD   Availability explained
We will order this item for you from a manufatured on demand supplier.

Table of Contents

MOS Device Fundamentals Hot-Carrier Injection Mechanisms Hot-Carrier Device Degradation AC and Process-Induced Hot-Carrier Effects Hot-Carrier Effects at Low Temperature and Low Voltage Dependence of Hot-Carrier Phenomena on Device Structure As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices Gate-to-Drain Overlatpped Devices (GOLD)

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