Overview

Full Product Details

Author:   Tibor Grasser
Publisher:   Springer International Publishing AG
Imprint:   Springer International Publishing AG
Edition:   2015 ed.
Dimensions:   Width: 15.50cm , Height: 2.90cm , Length: 23.50cm
Weight:   1.025kg
ISBN:  

9783319089935

ISBN 10:   3319089935
Pages:   517
Publication Date:   27 November 2014
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   Manufactured on demand  
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Part I: Beyond Lucky Electrons.- From Atoms to Circuits: Theoretical and Empirical Modeling of Hot Carrier Degradation.- The Energy Driven Hot Carrier Model.- Hot-Carrier Degradation in Decananometer.- Physics-based Modeling of Hot-carrier Degradation.- The Spherical Harmonics Expansion Method for Assessing Hot Carrier Degradation.- Recovery from Hot Carrier Induced Degradation Through Temperature Treatment.- Characterization of MOSFET Interface States Using the Charge Pumping Technique.- Part II: CMOS and Beyond.- Channel Hot Carriers in SiGe and Ge pMOSFETs.- Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs.- Characterization and Modeling of High-Voltage LDMOS Transistors.- Compact modelling of the Hot-carrier Degradation of Integrated HV MOSFETs.- Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors.

Reviews

Author Information

Tibor Grasser is an Associate Professor at the Institute for Microelectronics for Technische Universität Wien.

Tab Content 6

Author Website:  

Countries Available

All regions