High-Speed Photodiodes in Standard CMOS Technology

Author:   Sasa Radovanovic ,  Anne-Johan Annema ,  Bram Nauta
Publisher:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of hardcover 1st ed. 2006
Volume:   869
ISBN:  

9781441939449


Pages:   160
Publication Date:   19 November 2010
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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High-Speed Photodiodes in Standard CMOS Technology


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Author:   Sasa Radovanovic ,  Anne-Johan Annema ,  Bram Nauta
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of hardcover 1st ed. 2006
Volume:   869
Dimensions:   Width: 16.00cm , Height: 0.90cm , Length: 24.00cm
Weight:   0.454kg
ISBN:  

9781441939449


ISBN 10:   144193944
Pages:   160
Publication Date:   19 November 2010
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Introduction. Outline. Short range optical interconnection. Why optical interconnection? Characteristics of light. Optical fiber types. High intensity light sources. Photodetectors  introduction. High-speed optical receivers in CMOS for [small lambda] = 850 nm-literature overview. CMOS photodiodes for [small lambda] = 850 nm. Introduction. Bandwidth of photodiodes in CMOS. Intrinsic (physical) photodiode bandwidth. Extrinsic (electrical) photodiode bandwidth. Noise in photodiodes. Summary and conclusions. High data-rates with CMOS photodiodes. Introduction. Transimpedance amplifier design. Photodiode selection. Equalizer design. Robustness on spread and temperature. Experimental results. Conclusions. Bulk CMOS photodiodes for [small lambda]= 400 nm. Introduction. Finger nwell/p-substrate diode in adjoined-well technology. Finger n+/nwell/p-substrate diode. Finger n+/p-substrate photodiode in separate-well technology. Finger p+/nwell/p-substrate in adjoined-well technology. p+/nwell photodiode. Conclusion. Polysilicon photodiode. High-speed lateral polydiode. Noise in polysilicon photodiodes. Time domain measurements. Quantum efficiency and sensitivity. Conclusion. CMOS photodiodes: generalized. Introduction. Generalization of CMOS photodiodes. Device layer - photocurrent amplitude. Analog equalization. Summary and Conclusions. Conclusions. Conclusions.

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