GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model

Author:   Yogesh Singh Chauhan (Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, India) ,  Ahtisham Ul Haq Pampori (Department of Electrical Engineering, Indian Institute of Technology, Kanpur, U.P., India) ,  Sheikh Aamir Ahsan (Assistant Professor, Department of Electronics and Communication Engineering, National Institute of Technology Srinagar, Hazratbal, Srinagar, India) ,  Raghvendra Dangi (Department of Electrical Engineering, Indian Institute of Technology, Kanpur, U.P., India)
Publisher:   Elsevier Science Publishing Co Inc
ISBN:  

9780323998710


Pages:   425
Publication Date:   15 May 2024
Format:   Paperback
Availability:   Not yet available   Availability explained
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GaN Transistor Modeling for RF and Power Electronics: Using The ASM-HEMT Model


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Author:   Yogesh Singh Chauhan (Professor, Department of Electrical Engineering, Indian Institute of Technology Kanpur, India) ,  Ahtisham Ul Haq Pampori (Department of Electrical Engineering, Indian Institute of Technology, Kanpur, U.P., India) ,  Sheikh Aamir Ahsan (Assistant Professor, Department of Electronics and Communication Engineering, National Institute of Technology Srinagar, Hazratbal, Srinagar, India) ,  Raghvendra Dangi (Department of Electrical Engineering, Indian Institute of Technology, Kanpur, U.P., India)
Publisher:   Elsevier Science Publishing Co Inc
Imprint:   Woodhead Publishing
ISBN:  

9780323998710


ISBN 10:   0323998712
Pages:   425
Publication Date:   15 May 2024
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Forthcoming
Availability:   Not yet available   Availability explained
This item is yet to be released. You can pre-order this item and we will dispatch it to you upon its release.

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Yogesh Singh Chauhan is a Professor at the Indian Institute of Technology Kanpur. His research interests include the physics, characterization, and modeling of nanoscale semiconductor devices, and RF circuit design. He is the developer of several industry standard models, including the BSIM-BULK (BSIM6), BSIM-IMG, BSIM-CMG and ASM-HEMT models. Ahtisham Pampori is a doctoral student at the Indian Institute of Technology Kanpur (IIT Kanpur), currently working on the characterization and modeling of GaN HEMT RF devices. He is one of the developers of ASM-HEMT, an industry standard model for AlGaN/GaN HEMTs. His research is focused on the modeling and characterization of GaN HEMTs and their applications in RF systems. He is a recipient of the prestigious Prime Minister's Research Fellowship (PMRF). He holds his bachelor’s degree in Electronics and Communications Engineering from NIT Srinagar. Sheikh Aamir Ahsan received his PhD from Nanolab, Indian Institute of Technology Kanpur in 2017. He is currently an Assistant Professor of Electronics and Communication Engineering with the National Institute of Technology Srinagar, where he is involved in nanoelectronic device - simulation and theoretical modeling for circuit design. He was a visiting researcher with Keysight Technologies in 2016 and a postdoc at the New York University in 2018. He is the co-developer of the Industry Standard ASM-GaN-HEMT Model and also the winner of the Science and Engineering Research Board Early Career Research Award 2019.

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