Fundamentals of Nanoscaled Field Effect Transistors
Author:   Amit Chaudhry
Publisher:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 2013
ISBN:  

9781493944828


Pages:   201
Publication Date:   23 August 2016
Format:   Paperback
Availability:   Manufactured on demand   Availability explained
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Fundamentals of Nanoscaled Field Effect Transistors


Overview

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Full Product Details

Author:   Amit Chaudhry
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   Softcover reprint of the original 1st ed. 2013
Dimensions:   Width: 15.50cm , Height: 1.20cm , Length: 23.50cm
Weight:   3.343kg
ISBN:  

9781493944828


ISBN 10:   1493944827
Pages:   201
Publication Date:   23 August 2016
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   Manufactured on demand   Availability explained
We will order this item for you from a manufactured on demand supplier.

Table of Contents

Scaling of a MOS Transistor.- Nanoscale Effects- Gate Oxide Leakage Currents.- Nanoscale Effects- Inversion Layer Quantization.- Dielectrics for Nanoelectronics.- Germanium Technology.- Biaxial s-Si Technology.- Uniaxial s-Si Technology.- Alternate MOS Structures.- Graphene Technology.

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