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OverviewFull Product DetailsAuthor: Yuan Taur (University of California, San Diego) , Tak H. NingPublisher: Cambridge University Press Imprint: Cambridge University Press Edition: 3rd Revised edition Dimensions: Width: 17.30cm , Height: 3.20cm , Length: 25.00cm Weight: 1.330kg ISBN: 9781108480024ISBN 10: 1108480020 Pages: 622 Publication Date: 02 December 2021 Audience: Professional and scholarly , College/higher education , Professional & Vocational , Tertiary & Higher Education Format: Hardback Publisher's Status: Active Availability: In stock  We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsPrefaces; Physical constants and unit conversions; List of symbols; 1. Introduction; 2. Basic device physics; 3. p–n junctions and metal–silicon contacts; 4. MOS capacitors; 5. MOSFETs: long channel; 6. MOSFETs: short channel; 7. Silicon-on-insulator and double-gate MOSFETs; 8. CMOS performance factors; 9. Bipolar devices; 10. Bipolar device design; 11. Bipolar performance factors; 12. Memory devices; References; Index.ReviewsAuthor InformationYuan Taur is a Distinguished Professor of Electrical and Computer Engineering at the University of California, San Diego, having previously worked at IBM's T. J. Watson Research Center, New York. He is an IEEE Fellow. Tak H. Ning is an IBM Fellow (Retired) at the T. J. Watson Research Center, New York. He is a Fellow of the IEEE and the American Physical Society, and a member of the US National Academy of Engineering. Tab Content 6Author Website:Countries AvailableAll regions |
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