Overview

This book discusses one possible solution to the key issue in electronics engineering - the approaching limits of CMOS scaling - by taking advantage of the tendency of Schottky contacts to form at channel interfaces in nanoscale devices. Rather than suppressing this phenomenon, a functionality-enhanced device exploits it to increase switching functionality. These devices are Multiple-Independent-Gate-Field-Effect-Transistors, and other related nanoscale devices, whose polarity is electrostatically controllable. The functionality enhancement of these devices increases computational performance (function) per unit area and leads to circuits with better density, performance and energy efficiency. The book provides thorough and systematic coverage of enhanced-functionality devices and their use in proof-of-concept circuits and architectures. The theory and materials science behind these devices are addressed in detail, and various experimental fabrication techniques are explored. In addition, the potential applications of functionality-enhanced devices are outlined with a specific emphasis on circuit design, design automation and benchmarking.

Full Product Details

Author:   Pierre-Emmanuel Gaillardon (Assistant Professor, University of Utah, Salt Lake City, USA)
Publisher:   Institution of Engineering and Technology
Imprint:   Institution of Engineering and Technology
ISBN:  

9781785615580

ISBN 10:   1785615580
Pages:   344
Publication Date:   23 January 2019
Audience:   College/higher education ,  Professional and scholarly ,  Tertiary & Higher Education ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Chapter 1: Introduction to functionality-enhanced devices Part I: Materials and device research related to functionality-enhanced devices Chapter 2: Germanium-based polarity-controllable transistors Chapter 3: Two-dimensional materials for functionality-enhanced devices Chapter 4: Wse2 polarity-controllable devices Chapter 5: Carrier type control of MX2 type 2D materials for functionality-enhanced transistors Chapter 6: Three-independent gate FET's super steep subthreshold slope Chapter 7: Super sensitive terahertz detectors Part II: Applications and design techniques of functionality-enhanced devices Chapter 8: CNT and SiNW modeling for dual-gate ambipolar logic circuit design Chapter 9: Physical design of polarity controllable transistors Chapter 10: BCB benchmarking for three-independent-gate field effect transistors Chapter 11: Exploratory logic synthesis for multiple independent gate FETs Chapter 12: Ultrafine grain FPGAs with polarity controllable transistors Chapter 13: Tunnel FET-based security primitive design

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Author Information

Pierre-Emmanuel Gaillardon is an Assistant Professor in the Electrical and Computer Engineering Department and an adjunct assistant professor in the School of Computing at The University of Utah, Salt Lake City, USA where he leads the Laboratory for NanoIntegrated Systems (LNIS). Professor Gaillardon is recipient of the BSF 2017 Prof. Pazy Memorial Research Award, the 2018 NSF CAREER award in functionality-enhanced transistors and the 2018 IEEE CEDA Pederson Award.

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