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OverviewThis text consists of a comprehensive and critical compilation of data for the following materials and properties: diffusion in silicon, germanium and their alloys; diffusion in compound semiconductors; diffusion in silicides; chemical diffusion in bulk inhomogeneous semiconductors; grain-boundary and dislocation diffusion in semiconductors and silicides; and surface diffusion on semiconductors. Although most of the silicides are not semiconducting, this chapter is included because a number of them have become integrated in the Si technology and because they have not been treated in previous volumes. Full Product DetailsAuthor: C.E. Allen , D.L. Beke , H. Bracht , C.M. BruffPublisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K Edition: 1998 ed. Volume: 33A Dimensions: Width: 19.30cm , Height: 2.50cm , Length: 27.00cm Weight: 1.540kg ISBN: 9783540609643ISBN 10: 3540609644 Pages: 476 Publication Date: 18 March 1998 Audience: College/higher education , Professional and scholarly , Postgraduate, Research & Scholarly , Professional & Vocational Format: Mixed media product Publisher's Status: Active Availability: Out of stock ![]() The supplier is temporarily out of stock of this item. It will be ordered for you on backorder and shipped when it becomes available. Table of ContentsFrom the Contents: Atomic Fluxes.- Equations for diffusion.- Atomic mechanisms of diffusion.- Methods of measuring diffusion coefficients.- Temperature, pressure and mass dependence of diffusion.- Diffusion in elementary semiconductors.- Diffusion in compound semiconductors.- Diffusion in silicides.- Chemical diffusion.- Grain-boundary and dislocation diffusion.- Surface diffusionReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |