|
|
|||
|
||||
OverviewThis book investigates the advancement and analysis of strained channel cylindrical gate-all-around (CGAA) FETs. The study explores a nano-scale design incorporating three ultrathin strained layers: two outer layers of strained silicon (s-Si) and a middle layer of strained silicon germanium (s-SiGe), forming a heterostructure-on-insulator (HOI) within the CGAA FET. These strained layers in the channel effectively confine quantum carriers, thereby enhancing carrier mobility and reducing threshold voltage roll-off. Full Product DetailsAuthor: Rasmita Barik , Rasmita DharaPublisher: LAP Lambert Academic Publishing Imprint: LAP Lambert Academic Publishing Dimensions: Width: 15.20cm , Height: 1.00cm , Length: 22.90cm Weight: 0.249kg ISBN: 9786200381583ISBN 10: 6200381585 Pages: 180 Publication Date: 29 September 2025 Audience: General/trade , General Format: Paperback Publisher's Status: Active Availability: Available To Order We have confirmation that this item is in stock with the supplier. It will be ordered in for you and dispatched immediately. Table of ContentsReviewsAuthor InformationTab Content 6Author Website:Countries AvailableAll regions |
||||