Overview

As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-k) insulator as a replacement for silicon dioxide is the behaviour of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-k dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this text is to merge complex CMP models and mechanisms with experimental results with copper and low-&kgr to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.

Full Product Details

Author:   Christopher Lyle Borst ,  William N. Gill ,  Ronald J. Gutmann
Publisher:   Springer-Verlag New York Inc.
Imprint:   Springer-Verlag New York Inc.
Edition:   2002 ed.
Dimensions:   Width: 15.50cm , Height: 1.50cm , Length: 23.50cm
Weight:   1.180kg
ISBN:  

9781402071935

ISBN 10:   1402071930
Pages:   229
Publication Date:   30 September 2002
Audience:   College/higher education ,  Professional and scholarly ,  Postgraduate, Research & Scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

1: Overview of IC Interconnects.- 1.1 Silicon Ic Beol Technology Trends.- 1.2 Sia Roadmap Interconnect Projections.- 1.3 Low-? Requirements and Materials.- 1.4 Need for Low-? CMP Process Understanding.- 1.5 Summary.- 1.6 References.- 2: Low-? Interlevel Dielectrics.- 2.1 Fluorinated Glasses.- 2.2 Silsesquioxanes.- 2.3 Organosilicate Glasses.- 2.4 Polymers.- 2.5 Fluorinated Hydrocarbons.- 2.6 Nanoporous Silica Films.- 2.7 Other Porous Materials.- 2.8 References.- 3: Chemical-Mechanical Planarization (CMP).- 3.1 CMP Process Description.- 3.2 CMP Processes With Copper Metallization.- 3.3 CMP of Low-? Materials.- 3.4 CMP Process Models.- 3.5 Langmuir-Hinshelwood Surface Kinetics in CMP Modeling.- 3.6 References.- 4: CMP of BCB and SiLK Polymers.- 4.1 Removal Rate in Copper Slurries.- 4.2 Surface Roughness.- 4.3 Surface and Bulk Film Chemistry.- 4.4 Effect of Cure Conditions on BCB and Silk Removal.- 4.5 Effect of CMP and BCB and Silk Film Hardness.- 4.6 Comparison of BCB and Silk CMP with other Polymer CMP.- 4.7 Summary.- 4.8 References.- 5: CMP of Organosilicate Glasses.- 5.1 Effect of Film Carbon Content.- 5.2 Surface Roughness.- 5.3 Surface and Bulk Film Chemistry.- 5.4 Copper Damascene Patterning with OSG Dielectrics.- 5.5 Summary.- 5.6 References.- 6: Low-? CMP Model Based on Surface Kinetics.- 6.1 Isolation of the Chemical Effects in Silk CMP.- 6.2 CMP with Simplified “Model” Silk Slurries.- 6.3 Phenomenological Model for CMP Removal.- 6.4 Five Step Removal Model Using Modified Langmuir-Hinshelwood Kinetics for Silk CMP.- 6.5 Two Step Removal Model Using Heterogeneous Catalysis for Silk CMP.- 6.6 Extendibility of Model to Describe the CMP of Other Materials.- 6.7 References.- 7: Copper CMP Model Based Upon Fluid Mechanics and Surface Kinetics.- 7.1 FlowModel.- 7.2 Copper Removal Model.- 7.3 Model Results.- 7.4 Copper CMP Experiments with Potassium Dichromate Based Slurry.- 7.5 Summary.- 7.6 References.- 8: Future Directions in IC Interconnects and Related Low-? ILD Planarization Issues.- 8.1 Planarization of Interconnects with Ultra Low-? ILDS.- 8.2 Alternatives for the Post-Copper/Ultra Low-? Interconnect Era.- 8.3 3D Wafer-Scale Integration Using Dielectric Bonding Glues and Inter-Wafer Interconnection with Copper Damascene Patterning.- 8.4 Summary and Conclusions.- 8.5 References.- Appendices.- Appendix A: Experimental Procedures and Techniques.- Appendix B: XPS Depth-Profile Data.- Appendix C: CMP Data for Anomalous Silk Removal Behavior.

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