Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion
Author:   Edmund G. Seebauer ,  Meredith C. Kratzer
Publisher:   Springer London Ltd
Edition:   2009 ed.
ISBN:  

9781848820586


Pages:   298
Publication Date:   01 December 2008
Format:   Hardback
Availability:   In Print   Availability explained
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Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion


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Author:   Edmund G. Seebauer ,  Meredith C. Kratzer
Publisher:   Springer London Ltd
Imprint:   Springer London Ltd
Edition:   2009 ed.
Dimensions:   Width: 15.50cm , Height: 2.50cm , Length: 23.50cm
Weight:   0.629kg
ISBN:  

9781848820586


ISBN 10:   1848820585
Pages:   298
Publication Date:   01 December 2008
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

Fundamentals of Defect Ionization and Transport.- Experimental and Computational Characterization.- Trends in Charged Defect Behavior.- Intrinsic Defects: Structure.- Intrinsic Defects: Ionization Thermodynamics.- Intrinsic Defects: Diffusion.- Extrinsic Defects.

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Author Information

Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS. Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.

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