Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion
Author:   Edmund G. Seebauer ,  Meredith C. Kratzer
Publisher:   Springer London Ltd
Edition:   Softcover reprint of hardcover 1st ed. 2009
ISBN:  

9781849968201


Pages:   298
Publication Date:   22 October 2010
Format:   Paperback
Availability:   In Print   Availability explained
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Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion


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Author:   Edmund G. Seebauer ,  Meredith C. Kratzer
Publisher:   Springer London Ltd
Imprint:   Springer London Ltd
Edition:   Softcover reprint of hardcover 1st ed. 2009
Dimensions:   Width: 15.50cm , Height: 1.60cm , Length: 23.50cm
Weight:   0.474kg
ISBN:  

9781849968201


ISBN 10:   1849968209
Pages:   298
Publication Date:   22 October 2010
Audience:   Professional and scholarly ,  Professional & Vocational
Format:   Paperback
Publisher's Status:   Active
Availability:   In Print   Availability explained
This item will be ordered in for you from one of our suppliers. Upon receipt, we will promptly dispatch it out to you. For in store availability, please contact us.

Table of Contents

Fundamentals of Defect Ionization and Transport.- Experimental and Computational Characterization.- Trends in Charged Defect Behavior.- Intrinsic Defects: Structure.- Intrinsic Defects: Ionization Thermodynamics.- Intrinsic Defects: Diffusion.- Extrinsic Defects.

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Author Information

Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS. Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.

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