Overview

New methods for neutron detection have become an important area of research in support of national security objectives. In support of this effort, p-type B5C on n-type Si heterojunction diodes have been built and tested. This research sought to optimize the boron carbide (BC) diode by coupling the nuclear physics modeling capability of GEANT4 and TRIM with the semiconductor device simulation tools. Through an iterative modeling process of controllable parameters, optimal device construction was determined such detection efficiency and charge collection were optimized. This allows an estimation of expected charge collection and efficiency given a set of operating parameters that include: silicon resistivity, BC resistivity, BC thickness, silicon thickness, applied bias, and collection contact. Charge collection was maximized with high bias operation of thin BC layers on thin silicon substrates of low resistivity (lt;10 -cm), while the capture efficiency was maximized for thicker BC layers. Additionally, the effects of neutron damage on BC diodes were studied to determine damage thresholds and resulting device performance and lifetime. The major limitation found for device performance was the increase in the leakage current ( 340% at a thermal fluence of 9.7x1013 n cm-2) in the 8k -cm diode. Type inversion was not measured at the total fluence levels achieved, but the 8k -cm diode effective carrier concentrations (Neff) decreased by 30% at a total thermal fluence of 7.5x1013 n cm-2 (1x1013 1 MeV neutron equivalent). For the same irradiation conditions, the 20k -cm diode Neff This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

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