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Author:   Filip Tuomisto (Professor, University of Helsinki, Department of Physics, Finland)
Publisher:   Institution of Engineering and Technology
Imprint:   Institution of Engineering and Technology
ISBN:  

9781785616556

ISBN 10:   1785616552
Pages:   596
Publication Date:   16 December 2019
Audience:   College/higher education ,  Professional and scholarly ,  Tertiary & Higher Education ,  Professional & Vocational
Format:   Hardback
Publisher's Status:   Active
Availability:   In Print  
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Table of Contents

Chapter 1: Characterizing electrically active defects by transient capacitance spectroscopy Chapter 2: Luminescence from point defects in wide-bandgap, direct-gap semiconductors Chapter 3: Vibrational spectroscopy Chapter 4: Magnetic resonance methods Chapter 5: The role of muons in semiconductor research Chapter 6: Positron annihilation spectroscopy, experimental and theoretical aspects Chapter 7: First principles methods for defects: state-of-the-art and emerging approaches Chapter 8: Microscopy of defects in semiconductors Chapter 9: Three-dimensional atomic-scale investigation of defects in semiconductors by atom probe tomography Chapter 10: Ion-beam modification of semiconductors Chapter 11: Characterizing defects with ion beam analysis and channeling techniques

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Author Information

Filip Tuomisto is a professor at the Department of Physics, University of Helsinki, Finland. He specializes in the development of experimental methods based on positron annihilation spectroscopy, and in the application of these methods to studying defects in solids in general and semiconductors in particular. He has published more than 200 scientific journal articles on these topics.

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